AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF5S21045MR1 MRF5S21045MBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100 120 140 150 170 190110 130 160 180 200
210
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2
for MTTF in a particular application.
108
107
106
MTTF FACTOR (HOURS x AMPS
2
)
W-CDMA TEST SIGNAL
246810
0.0001
100
0
PEAK?TO?AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
+203.84 MHz
+30
Channel BW
?IM3 in3.84 MHz BW3.84 MHz BW+IM3 in
3.84 MHz BW3.84 MHz BW
?ACPR in+ACPR in
PROBABILITY (%)
(dB)
0
?10
?40
?50
?60
?70
?80
?20
?25 2551510
20
0
?5
?10
?15
?20
?30
W?CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ 10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF5S21045NR1
MOSFET RF N-CH 28V 10W TO270-4
MRF5S21090HSR5
MOSFET RF N-CHAN 28V 19W NI-780S
MRF5S21100HSR5
MOSFET RF N-CHAN 28V 23W NI-780S
MRF5S21130HSR5
MOSFET RF N-CHAN 28V 28W NI-880S
MRF5S4125NR1
MOSFET RF SGL 450MHZ TO-270-4
MRF5S4140HSR5
MOSFET RF N-CHAN 28V 28W NI-780S
MRF5S9070MR1
MOSFET RF N-CH 26V 70W TO-270-2
MRF5S9070NR5
MOSFET RF N-CH 26V 70W TO-270-2
相关代理商/技术参数
MRF5S21045NBR1
功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21045NR1
功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21045NR1_09
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21090HR3
功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21090HR3_06
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF5S21090HR3_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF5S21090HR5
功能描述:射频MOSFET电源晶体管 HV5 RF PWR LDMOS NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21090HSR3
功能描述:射频MOSFET电源晶体管 HV5 RF LDMOS NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray